INTEGRATED CIRCUITS
SA2411
+20 dBm single chip linear amplifier for WLAN
Product data
2003 Feb 07
Supersedes data of 2002 Jul 31
Philips
Semiconductors
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
5. PINNING INFORMATION
V
_MAIN
1
2
3
4
5
6
7
8
16
V
_BIAS
DD
DD
V
_DRIVER
GND
IN+
15 PWRUP
14 GND
DD
13 RF_GND
12 ANT
IN–
GND
11 GND
DETECTOR
GND
10 MODE
9
GND
SR02384
Figure 2. Pin configuration
Table 2. Pin description
PIN type is designated by A = Analog, D = Digital, I = Input, O = Output
SYMBOL
_MAIN
PIN
1
DESCRIPTION
Analog supply, V for power amplifier, 150 mA
TYPE
V
V
A
DD
DD
_DRIVER
2
Analog supply, V for biasing driver, 35 mA
A
DD
DD
GND
3
Grounding
A
IN+
4
Input pin, positive part of balanced signal
Input pin, negative part of balanced signal
Grounding
AI
AI
A
IN–
5
GND
6
DETECTOR
GND
7
Power detector output
AO
A
8
Grounding
GND
9
Grounding
A
MODE
GND
10
11
12
13
14
15
16
Mode switch; floating = high gain, grounded = low gain
Grounding
AI
A
ANT
Output pin, RF, to antenna
RF ground must be connected
Grounding
AO
A
RF_GND
GND
A
PWRUP
Power up pin. HIGH = amplifier is on. LOW = amplifier is off.
DI
A
V
DD
_BIAS
Analog supply, V for biasing the amplifier, 5 mA
DD
All GND pins should be connected to ground to guarantee the best performance.
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
6. FUNCTIONAL DESCRIPTION
The main building-blocks are:
• Fixed gain amplifier (PA)
• Output matching
• Input matching
• Power Detector
• Power Mode
Input
The device has differential inputs so a balun is needed in the case of single ended operation, input impedance is approximately 75 Ω + 25j Ω,
balanced. The inputs can be DC biased with the pin V _DRIVER. The input matching is optimized to interface with the SA2400A WLAN
DD
transceiver chip.
Amplifier
The amplifier is a fixed gain, class AB amplifier. There is an additional pin, V _BIAS, to adjust the class A bias current. Reducing the class A
DD
currents reduces the gain. This allows trade-offs to be made among gain, linearity and current.
Output matching
The output of the amplifier is matched, on chip, for a 50 Ω load. The matching includes the supply feed for the power amplifier. The pin
V
DD
_MAIN is the main supply for the amplifier. No additional filtering is needed to meet the 802.11b spec.
Power detector
The power detector detects the power level and transforms it into a low frequency current. The detector output must be loaded with a resistor to
ground for the highest accuracy. This resistor has an optimal value of 5.6 kΩ. Lower values can be used to comply with maximum input
sensitivity of ADCs, at the cost of dynamic range. The maximum voltage detected is 2.3 V.
Power mode
This pin selects the desired gain and linearity level (13 dB or 14.5 dB gain). The low gain is more applicable to high voltage applications from
3.3 V to 3.6 V. The high gain is more applicable to low voltage applications lower than 3.3 V.
NOTE:
In order to assure optimal thermal performance, it is recommended that all ground pins be connected, and that the number of vias to ground
under the chip be maximized. In addition, the use of solder mask under the chip (for scratch protection) is not recommended.
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
7. CONNECTIVITY DIAGRAM
ANT
V
PWRUP
DD
R1
L1
C1
SA2411
L2
C2
Idet.
R2
L3
C4
C3
V
det
RFin
RFin
SR02385
C1, C2, C3
C4
= 5.6 pF
= 10 nF
R1
= optional connect to ground via 0 W resistor.
R2
= optional resistor to ground to convert current into voltage
L1, L2, L3
= Optional inductors
1 nH … 10 nH, or microstrip lines with length 1 … 10 mm.
No inductors and directly connecting all supplies to V might cause problems. The optimal values of the inductors
DD
depends on the application board.
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
8. OPERATION
The SA2411 linear amplifier is intended for operation in the 2.4 GHz band, specifically for IEEE 802.11 1 and 2 Mbits/s DSSS, and 5.5 and 11
Msymbols/s CCK standards. Throughout this document, the operating RF frequency refers to the ISM band between 2.4 and 2.5 GHz.
Amplifier Output Power
The SA2411 linear amplifier is designed to give at least 19 dBm output power for an 11 Msymbols/s CCK modulated input carrier. At 19 dBm
output power the ACPR specs are met. The fixed gain amplifier amplifies the input signal by 14.5 dB typically.
Power Mode
The biasing can be adjusted to change the gain and therefore the maximum linear output power. For high supply voltages (>3.2 V) the low-gain
mode is advised. For low supply voltages (<3.3 V) the high-gain mode is advised.
Power Mode
Pin 9 =
Typical output power Typical small
signal Gain
Typical DC current
(no RF signal)
Typical Current
consumption
High
Low
Floating
20.0 dBm
20.0 dBm
14.5 dB
13 dB
35 mA
28 mA
185 mA @ 20 dBm
185 mA @ 20 dBm
Grounded
Power detector
The power detector current output is linear proportional with the RF output voltage. The RF output power is quadratic proportional to the RF
output voltage. Therefore, the detector is quadratic proportional to the output power. The following relation can be expressed:
Pout + k Vndetector
2
P
out
is output power in mWatt, V
is detector voltage in Volt, k = sensitivity in mWatt/V , n = quadratic factor.
detector
2
The quadratic factor is 1.5. The sensitivity is then 49 mWatt/V .
P
out
V
(5.6 kΩ load)
I
(5.6 kΩ in series)
detector
detector
20 dBm = 100 mW
19 dBm = 79 mW
17 dBm = 50 mW
15 dBm = 32 mW
9 dBm = 8 mW
1.7 V
1.4 V
1.0 V
0.7 V
0.3 V
300 uA
250 uA
175 uA
125 uA
50 uA
The loading of the detector can be different in the application. The highest accuracy is achieved with 5.6 kΩ. But other values can be used to
adapt to the maximum input sensitivity of other circuits. Other detector loading values result in other k-factors. The maximum detector voltage is
limited to about 2.4 V.
DC feed at input
There is a possibility to add a DC voltage at the input pins (pin 4 and pin 5) by feeding pin 2. This option should be used in case the SA2411 is
lined up with the SA2400A.
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
9. OPERATING CONDITIONS
The SA2411 shall meet all of the operating conditions outlined in this section. Table 3 specifies the absolute maximum ratings for the device.
Table 4 gives the recommended operating conditions.
Table 3. Absolute maximum ratings
Symbol
Parameter
Min
–55
–0.5
–0.5
–
Max
Unit
°C
V
T
stg
Storage temperature
+150
+3.85
V
–
–
Supply voltage (analog)
Voltage applied to inputs
Short circuit duration, to GND or V
DDa
V
1
+0.5
V
DD
sec
DD
Table 4. Recommended operating conditions
Symbol
Parameter
Min
–40
2.85
Nom
–
Max
Units
°C
T
amb
Ambient operating temperature
Supply voltage (analog)
+85
3.6
V
DDa
3.3
V
10. SA2411 TRANSMITTER REQUIREMENTS
Table 5. SA2411 transmitter specifications
T
amb
= 25 °C; V = 3 V; frequency = 2.45 GHz, R
= 5.6 kΩ, unless otherwise stated.
CC
detector
Specification
DC
Condition, Remarks
Min
Nom
Max
Units
DC current
Standard mode (pin 10 is floating)
Low output power mode (pin 10 is grounded)
Vpwrup = 0 V. Vss = 3.0 V
–
–
–
35
28
–
–
mA
mA
µA
DC current
–
Leakage current
AC : 802.11b MODULATION
Output back off
RF frequency
Input impedance
Load impedance
10
(relative to 1 dB compression of single carrier)
–
2
–
dB
GHz
Ω
2.4
–
2.45
100
50
2.5
–
Differential (75 Ω + 25j Ω)
Single ended
–
–
Ω
Power gain for small signal
Power gain for small signal
Mode = High gain, Input level = –20 dBm
Mode = Low gain, Input level = –20 dBm
–
–
14.5
13
–
–
dB
dB
Output power
Current consumption
Gain
Meeting the FCC specs of 30 dBc and 50 dBc, mode = high
–
–
–
–
–
–
+20.0
200
–
–
–
–
–
–
dBm
mA
dB
“
“
12.5
+20.0
200
Output power
Current consumption
Gain
Meeting the FCC specs of 30 dBc and 50 dBc, mode = low
dBm
mA
dB
“
“
12.5
Power ramping up time
10% to 90% ramp up
–
–
0.5
–
–
µs
Power ramping down (when
enabled)
a) 90% to 10% ramp down
b) 10% to carrier leakage level
0.5
0.5
µs
Error Vector Magnitude
Isolation
11 Msymbols/s QPSK. Both RF outputs.
Pin 15 (PWRUP) = 0 V
–
–
–
5
–
–
–
%
15
40
dB
dBc
Harmonic Suppression at 2 and 3 fundamental frequency output power = +20 dBm
times fundamental frequency
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Table 6. SA2411 Detector specification
T
amb
= 25 °C, V = 3.0 V
CC
Specification
Condition, Remarks
Min
Nom
Max
Units
GENERAL
2
Detector sensitivity
With 5 kΩ load resistor to ground
At 16 dBm –40 °C to +80 °C; from 2.7 V to 3.6 V
From sample to sample
–
–
–
–
–
–
–
–
49
–
–
–
–
–
–
–
–
mW/V
Detector accuracy per sample
Absolute accuracy
0.3
0.5
1.5
500
1
dB
dB
–
Detector quadratic factor
Detector settling time
Spread from sample to sample
Absolute detector voltage
Absolute detector voltage error
From 10% to 90% of final value
20 dBm output power
ns
dB
V
19 dBm output power
1.4
0.15
From –30 °C to +80 °C;
from 2.7 V to 3.6 V at 19 dBm output power
V
Detector power range
+10
–
+21
dBm
11. GRAPHS
The following graphs are only for a typical sample measured on a SA2411 test board under nominal condition applying an 11Mb/s CCK 802.11b
modulation. Corrections for input, output and supply losses have been applied. The dotted lines represent the low gain mode. The solid
lines are for the high gain mode.
The first two graphs are small signal graphs. The gain and the DC currents are plotted versus supply voltage.
DC current versus Supply Voltage
Gain versus Supply Voltage
50
40
30
20
10
18.0
16.0
14.0
12.0
10.0
2.7
2.9
3.1
3.3
3.5
2.7
2.9
3.1
3.3
3.5
SR02464
Supply Voltage[V]
Supply Voltage[V]
SR02465
Figure 3. DC current vs. supply voltage
Figure 4. Gain vs. supply voltage
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The next eight graphs are presenting the power sweep for both gain modes at nominal conditions.
Output Power versus Input Power
Efficiency versus Output Power
22
20
18
16
14
12
10
25.0%
20.0%
15.0%
10.0%
5.0%
0.0%
–4
–2
0
2
4
6
8
–2
2
6
10
14
18
22
Pin[dbm]
Pout[dbm]
SR02466
SR02468
Figure 5. Output power vs. input power
Figure 7. Efficiency vs. output power
Gain versus Output Power
Current consumption vs Output Power
16
15
14
13
12
200
150
100
50
0
5
10
15
20
–10
–6
–2
2
6
10
14
18
22
Pout[dbm]
Pout[dbm]
SR02469
SR02467
Figure 6. Gain vs. output power
Figure 8. Current consumption vs. output power
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Detector Voltage versus Output Power
ACPR versus Output Power
2
–25
1.5
–30
–35
–40
–45
1
0.5
0
8
10
12
14
16
18
20
22
7
12
17
22
Pout[dbm]
Pout[dbm]
SR02470
SR02472
Figure 11. Detector voltage vs. output power
Figure 9. ACPR vs. output power
Detector Error versus Output Power
ALT versus Output Power
1.0
–46
–50
–54
–58
–62
0.5
0.0
–0.5
–1.0
7
12
17
22
7
12
17
22
Pout[dbm]
Pout[dbm]
SR02473
SR02471
Figure 12. Detector error vs. output power
Figure 10. ALT vs. output power
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The next curves present the frequency dependency for an input power of +7 dBm:
Efficiency versus Frequency
Output Power versus Frequency
20.0%
15.0%
10.0%
5.0%
21
20
19
18
17
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
0.0%
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
SR02476
Frequency[GHz]
Frequency[GHz]
SR02474
Figure 13. Output power vs. frequency
Figure 15. Efficiency vs. frequency
ACPR versus frequency
Gain versus Frequency
–28
–30
–32
–34
–36
15
14
13
12
11
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
SR02475
Frequency[GHz]
Frequency[GHz]
SR02477
Figure 14. Gain vs. frequency
Figure 16. ACPR vs. frequency
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
ALT versus Frequency
Detector Errror versus Frequency
–48
1.0
0.5
–50
–52
–54
–56
0.0
–0.5
–1.0
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
Frequency[GHz]
Frequency[GHz]
SR02478
SR02480
Figure 17. ALT vs. frequency
Figure 19. Detector error vs. frequency
Detector Voltage versus Frequency
2
1.5
1
0.5
0
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
Frequency[GHz]
SR02479
Figure 18. Detector voltage vs. frequency
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The last 5 curves are characterization data for supply voltage, temperature and power. The worst-case scenario is the combination of highest
temperature/lowest supply. The best-case scenario is the combination of lowest temperature and highest supply voltage. The data has been
taken using a non-modulated carrier at 2.5 GHz.
50.00
–30
0
30.00
28.00
26.00
24.00
22.00
20.00
–30
0
45.00
40.00
35.00
30.00
25.00
25
70
85
25
70
85
2.8
3.0
3.2
3.4
3.6
2.8
3.0
3.2
3.4
3.6
Supply Voltage [V]
Supply Voltage [V]
SR02484
SR02481
Figure 20. DC current vs. supply voltage, mode = high
Figure 23. Efficiency vs. supply voltage, mode = high
0.50
17.00
16.00
15.00
14.00
13.00
–30
–30
0
0
0.25
0.00
25
70
85
25
70
85
–0.25
–0.50
2.8
3.0
3.2
3.4
3.6
2.8
3.0
3.2
3.4
3.6
Supply Voltage [V]
Supply Voltage [V]
SR02482
SR02485
Figure 21. Gain vs. supply voltage, mode = high
Figure 24. Detector error vs. supply voltage, mode = high
20.00
–30
0
19.00
18.00
17.00
25
70
85
2.8
3.0
3.2
3.4
3.6
Supply Voltage [V]
SR02483
Figure 22. Output power vs. supply voltage, mode = high
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
12. APPLICATION WITH THE SA2400A
Next diagram is the application of the SA2400A with the SA2411.
The interface is simple. Two equal microstrip lines connect the SA2400A with the SA2411. The length of this connection should be kept to a
minimum.
The supply for the open collectors of the SA2400A is provided via pin 2 of the SA2411.
C2 is for supply voltage decoupling.
RF connection
V
PWRUP
DD
Other connection
16
15
14
13
12
11
10
9
SA2411
1
2
3
4
5
6
7
8
I
detector
C2
3-WIRE BUS
48
47
46
45
44
43
42
41
40
39
38
37
TX_IN_I_P/
TX_DATA_I
AGCRESET
AGCSET
1
36
35
34
33
TX_IN_I_M/
TX_DATA_Q
2
3
4
IDCOUT
A_GND
TX_IN_Q_P
TX_IN_Q_M
SA2400A
SR02487
Figure 25.
NOTE: A suggested starting point for designing the coupled microstrip lines:
Length = 1/18 λ. Width = 12 mils, Separation = 5 mils with the Dielectric constant = 4.6.
This should result in Z = 150 Ω, Z = 75 Ω, and Z = 30 Ω.
even
o
odd
There should be no ground plane under the microstrip lines.
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm
SOT403-1
15
2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
REVISION HISTORY
Rev
Date
Description
_3
20030207
Product data (9397 750 10825); ECN 853-2346 29486 of 07 February 2003;
supersedes Preliminary data SA2411 revision 2 of 31 July 2002 (9397 750 10166).
Modifications:
• Features (Section 2.)
– First bullet: from “75 Ω” to “75 Ω + 25j Ω ”
– delete bullet “1 dB attenuator”
• Block diagram: signal “Power mode” changed to “Power-up power mode”.
• Pin names modified.
• Functional description (Section 6.), Power mode: from “(14 dB or 14.5 dB gain)” to “(13 dB or 14.5 dB gain)”.
• Typical small signal Gain (HIGH) changed from 15 dB to 14.5 dB; (LOW) changed from 14 dB to 13 dB.
• Input impedance (nom) changed from 200 Ω to 100 Ω; Condition changed from “differential (100 + 100 Ω)” to
“differential (75 Ω + 25j Ω)”
• Gain (nom) changed from 13.0 dB to 12.5 dB.
• Output power (nom) changed from +20.5 to +20.0.
• Figures 20 through 24 modified.
• Note added below Figure 25.
_2
_1
20020731
20020723
Preliminary data (9397 750 10166).
Preliminary data (9397 750 10144).
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2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Data sheet status
Product
status
Definitions
[1]
Level
Data sheet status
[2] [3]
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limitingvaluesdefinition— Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
viaaCustomerProduct/ProcessChangeNotification(CPCN).PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveys
nolicenseortitleunderanypatent, copyright, ormaskworkrighttotheseproducts, andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,
copyright, or mask work right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2003
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
Fax: +31 40 27 24825
Date of release: 02-03
9397 750 10825
For sales offices addresses send e-mail to:
Document order number:
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Semiconductors
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